闵泰教授学术报告

发布日期:2015-09-21 作者:    编辑:    来源:6163银河net163am

应6163银河net163am邀请,西安交通大学闵泰教授来我院科研交流并作学术报告,欢迎参加!

报告题目: Road Beyond CMOS

时间:9月23日,星期三,10:00

地点:格致楼 5004 会议室

摘要: For past 50 years, charge based silicon technology and scaling law (Moore’s Law) have been the fundamental driver of computational technology, catalyst for the emergence of the Digital Age. In this “no trade-off” era, consistent exponential performance growth is sustained by vigorous feature scaling, while computation is kept utilizing the Boolean logic and Von Neumann architecture system, achieving exact calculation and communication gain through noise suppression. However, as the technology node reaches beyond 10nm, the complexity of Si-based transistor has increased tremendously and become cost-prohibitive, new functional material needs to be developed. All industry-developed countries and world major semiconductor companies are actively searching for the next “Genome” material to replace Si. Currently, the low dimensional physical material system like Graphene, MX2, topological insulator, ultra-thin spintronic thin film system are being eagerly explored as candidates which promises many revolutionary ways of future computing.

个人简介

姓名: 闵泰 教授

电子邮件: tai.min@mail.xjtu.edu.cn

工作地址:西安交通大学

教育经历:电机系博士&硕士学位,美国明尼苏达大学物理系学士学位,中国科学技术大学

主要经历

1.1980年至1993年:美国明尼苏达大学电机系博士&硕士,中国科学技术大学物理系学士;

2.1993年至2015年:22年国际一流大型企业工作经历,多成功首次研发出国际领先新型产品( IBM外业界第一款AMR磁记录头产品,世界第一款巨磁阻磁记录头产品, STT-MRAM专家),积累了大量先进的管理经验;

3.历任资深总监、总监、经理、主任工程师、高级工程师;

4.成功地组建并领导了IMEC业界领先的sub-20nm 垂直式STT-MRAM及sub-5nm Spintronics技术的研发 (发表了IMEC第一篇垂直式STT-MRAM IEDM paper 2014;该研发获评IMEC 30年30项杰出成果之一);

5.成功地组织并领导了TDK业界领先新型STT-MRAM产品的研发和产品化; 掌握产品化know-hows;

6.主管MRAM产品的设计、模拟、测试、封装、生产、质检、客户支持等部门和项目;

7.组建,招聘,培训MRAM产品设计,测试,质检和客户支持等部门;

8.拥有66项美国颁发的专利,用于多项核心专利,奠定了公司的MRAM,磁记录产品基础。